Detailed introduction to MRAM, which combines the excellent performance of various types of memory. – Life is not a problem to be solved, but a reality to be experienced.

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MRAM is Abbreviation for magnetoresistive random access memory. After more than 10 years of continuous research and development, the world’s first officially mass-produced and supplied MRAM chip model is MR2A16A. It adopts a 44-pin TSOP package and has a capacity of 4M bits. It operates from a single 3.3V power supply and can perform read/write operations at frequencies up to 28.5MHz.

There are various storage devices in today’s electronic equipment, including SRAM, DRAM, flash memory and hard disks. Different storage devices have different characteristics. They are very different in terms of service life, read and write speed, storage capacity/density, usage method and price, and are irreplaceable. Therefore, there are often multiple storage devices in a device. At present, there is no storage technology that can replace all these storage devices and become a universal memory. However, the emergence of MRAM has changed this situation. MRAM integrates the high-speed reading and writing functions of SRAM and the non-volatile nature of flash memory. It can be used as a single storage device for bothIt is a system that needs to store data quickly and in large quantities, and needs to retain the data after a power outage and recover it quickly.

Figure 1. Structure of MRAM storage unit

The reason why MRAM has such performance is that, unlike traditional RAM, it relies on magnetic field polarization instead of electric charge. situation to retain data. The structure of the MRAM memory unit is shown in Figure 2. It consists of three layers. The bottom layer becomes the unconstrained layer, the center layer is the tunnel gate layer, and the upper layer is the fixed layer. The magnetic field polarization direction of the unconstrained layer can be changed, while the magnetic field polarization direction of the fixed layer is fixed. When the magnetic field directions of the unconstrained layer and the fixed layer are parallel, the memory unit exhibits low resistance; when the magnetic field directions are opposite, the memory unit exhibits high resistance. MRAM determines whether the stored data is 0 or 1 by detecting the resistance of the storage unit.

Figure 2 shows the structure and reading and writing methods of MRAM storage units more clearly. On the lower left side of the figure is a transistor. When it is turned on, current can flow through the storage unit MTJ (magnetic tunnel junction). By comparing with the reference value, the resistance of the storage unit is determined, and the stored data can be read out. . When the transistor is turned off, current can flow through programming line 1 and programming line 2 (WriteLine and WriteLine2 in the figure). Under the combined influence of the programming magnetic field they generate, the direction of the magnetic field in the unconstrained layer changes, thereby changing the direction of the magnetic field in the unconstrained layer. Complete programming operations.

Figure 2. The storage unit structure of MRAM is the read/write mode.

An important obstacle to achieving reliable storage of MRAM is the high bit interference rate. When programming the target storage unit Jamaica Sugar Daddy, the unconstrained layer in the non-target unit may be misprogrammed. At present, Everspin researchers have successfully solved this problem. The pulse currents on write line 1 and write line 2 generate a torsional magnetic field, and only the units they act on together will produce a change in magnetization polarity, thus not disturbing other bit units in the same row or column.

To take an additional step of isolating non-target units from interference, Everspin also uses plating to wrap three sides of the external copper wire. This coating directs and focuses the magnetic field strength to the destination unit. This allows programming with much lower currents and isolates units around the magnetic field that would normally be disturbed. Another difficulty with the EveJamaica Sugarrspin MRAM rig is due to the extremely thin A10x tunnel junction. A small change in the A10x junction thickness results in a large change in unit resistance. Everspin also solved this problem, thus achieving complete wafer surface andDifferent authentic knots can be produced in all batches.

Everspin also improved the fixed magnetic layer by adding two additional layers. A layer of nails (Ru) is added above the fixed layer. Another magnetic layer called a pinning layer is added above the Ru layer. The polarity of the fixed layer and the control layer are opposite, which will cause strong coupling and keep the polarity of the fixed layer locked, so it will not cause false reversal during the programming operation.

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